HIGH UNIFORMITY OF AL0.3GA0.7AS/IN0.15GA0.85AS DOPED-CHANNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON 3'' GAAS SUBSTRATES

被引：2

作者：

CHAN, YJ

YANG, MT

YEH, TJ

CHYI, JI

机构：

[1] Department of Electrical Engineering, National Central University, Chungli

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 07期

关键词：

ALGAAS/INGAAS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR; MOLECULAR BEAM EPITAXY;

D O I：

10.1007/BF02653355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al0.3Ga0.7As/In0.15Ga0.85As doped-channel structures were grown by molecular beam epitaxy on 3'' GaAs substrates. The uniformities of electrical and optical properties across a 3'' wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A 1 mum long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.

引用

页码：675 / 679

页数：5

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