CHARACTERISTICS OF GAAS/ALGAAS-DOPED CHANNEL MISFETS AT CRYOGENIC TEMPERATURES

被引：12

作者：

LASKAR, J ^{[1
]}

KOLODZEY, J ^{[1
]}

KETTERSON, AA ^{[1
]}

ADESIDA, I ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.56481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Alo.3Gao.7As metal-insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation fmax from 70 to 81 GHz and an increase in the unity current gain cutoff frequency fT from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the highspeed potential of doped channel MISFET's at both room temperature and cryogenic temperatures. © 1990 IEEE

引用

页码：300 / 302

页数：3

共 17 条

[1] INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].