BIAS DEPENDENCE OF FT AND FMAX IN AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET

被引：7

作者：

DELALAMO, JA ^{[1
]}

MIZUTANI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：654 / 656

页数：3

共 13 条

[1] MICROWAVE CHARACTERIZATION OF (AL,GA)AS/GAAS MODULATION-DOPED FETS - BIAS DEPENDENCE OF SMALL-SIGNAL PARAMETERS [J].

ARNOLD, DJ ;

FISCHER, R ;

KOPP, WF ;

HENDERSON, TS ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1399-1402

[2]

CHEN YK, 1987, IEDM, P431

[3]

DELALAMO J, 1988, 46TH ANN DEV RES C B

[4] AN INALAS/N+-INGAAS MISFET WITH A MODULATION-DOPED CHANNEL [J].

DELALAMO, JA ;

MIZUTANI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2441-2441

[5] AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET WITH A HEAVILY DOPED CHANNEL [J].

DELALAMO, JA ;

MIZUTANI, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :534-536

[6] HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J].

FUJII, T ;

INATA, T ;

ISHII, K ;

HIYAMIZU, S .

ELECTRONICS LETTERS, 1986, 22 (04) :191-192

[7] CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD [J].

HIRAKAWA, K ;

SAKAKI, H ;

YOSHINO, J .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :253-255

[8] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[9] MODELING OF GAAS/ALGAAS MODFET INVERTERS AND RING OSCILLATORS [J].

KETTERSON, A ;

MOLONEY, M ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :359-362

[10]

Lee S. J., 1983, International Electron Devices Meeting 1983. Technical Digest, P103

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