HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE

被引：48

作者：

FUJII, T

INATA, T

ISHII, K

HIYAMIZU, S

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 04期

关键词：

D O I：

10.1049/el:19860133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / 192

页数：2

共 6 条

[1]

CHENG KY, 1982, J APPL PHYS, V53, P411

[2] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[3] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].

HEIBLUM, M ;

WANG, WI ;

OSTERLING, LE ;

DELINE, V .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6751-6753

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[5] ELECTRICAL AND OPTICAL-PROPERTIES OF SI-DOPED AND SN-DOPED INXGA1-XAS(X CONGRUENT-TO 0.53) GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUBIAK, RA ;

HARRIS, JJ ;

DAWSON, P .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :598-600

[6] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

WOOD, CEC ;

BOARD, K ;

DANDEKAR, N ;

EASTMAN, LF ;

DEVLIN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4062-4069

← 1 →