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INVESTIGATION OF INFLUENCE OF DX CENTERS ON HEMT OPERATION AT ROOM-TEMPERATURE
被引:9
作者
:
GODTS, P
论文数:
0
引用数:
0
h-index:
0
GODTS, P
CONSTANT, E
论文数:
0
引用数:
0
h-index:
0
CONSTANT, E
ZIMMERMANN, J
论文数:
0
引用数:
0
h-index:
0
ZIMMERMANN, J
DEPREEUW, D
论文数:
0
引用数:
0
h-index:
0
DEPREEUW, D
机构
:
来源
:
ELECTRONICS LETTERS
|
1988年
/ 24卷
/ 15期
关键词
:
D O I
:
10.1049/el:19880638
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:937 / 938
页数:2
相关论文
共 10 条
[1]
NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
CAPPY, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
CAPPY, A
VANOVERSCHELDE, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
VANOVERSCHELDE, A
SCHORTGEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
SCHORTGEN, M
VERSNAEYEN, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
VERSNAEYEN, C
SALMER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
SALMER, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
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2796
[2]
CONSTANT E, 1988, IN PRESS I PHYSICS C
[3]
DAMBRINE G, 1988, IN PRESS IEEE T ED, V35
[4]
TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LANG, DV
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LOGAN, RA
JAROS, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
JAROS, M
[J].
PHYSICAL REVIEW B,
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PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS/GAAS MODULATION DOPED LAYERS AND FIELD-EFFECT TRANSISTORS - A REVIEW
NATHAN, MI
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0
引用数:
0
h-index:
0
NATHAN, MI
[J].
SOLID-STATE ELECTRONICS,
1986,
29
(02)
: 167
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172
[6]
QUASI-FERMI LEVEL BENDING IN MODFETS AND ITS EFFECT ON FET TRANSFER CHARACTERISTICS
PONSE, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
PONSE, F
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MASSELINK, WT
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MORKOC, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
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PROST W, 1988, IN PRESS I PHYSICS C
[8]
ROCHETTE JF, 1982, I PHYS C SER, V65, P385
[9]
THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET)
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
SCHUBERT, EF
FISCHER, A
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
FISCHER, A
PLOOG, K
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
PLOOG, K
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
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: 625
-
632
[10]
THEIS TN, 1988, IN PRESS I PHYSICS C
←
1
→
共 10 条
[1]
NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
CAPPY, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
CAPPY, A
VANOVERSCHELDE, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
VANOVERSCHELDE, A
SCHORTGEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
SCHORTGEN, M
VERSNAEYEN, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
VERSNAEYEN, C
SALMER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
SALMER, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(12)
: 2787
-
2796
[2]
CONSTANT E, 1988, IN PRESS I PHYSICS C
[3]
DAMBRINE G, 1988, IN PRESS IEEE T ED, V35
[4]
TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LANG, DV
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LOGAN, RA
JAROS, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
JAROS, M
[J].
PHYSICAL REVIEW B,
1979,
19
(02)
: 1015
-
1030
[5]
PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS/GAAS MODULATION DOPED LAYERS AND FIELD-EFFECT TRANSISTORS - A REVIEW
NATHAN, MI
论文数:
0
引用数:
0
h-index:
0
NATHAN, MI
[J].
SOLID-STATE ELECTRONICS,
1986,
29
(02)
: 167
-
172
[6]
QUASI-FERMI LEVEL BENDING IN MODFETS AND ITS EFFECT ON FET TRANSFER CHARACTERISTICS
PONSE, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
PONSE, F
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MASSELINK, WT
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MORKOC, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(06)
: 1017
-
1023
[7]
PROST W, 1988, IN PRESS I PHYSICS C
[8]
ROCHETTE JF, 1982, I PHYS C SER, V65, P385
[9]
THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET)
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
SCHUBERT, EF
FISCHER, A
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
FISCHER, A
PLOOG, K
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
PLOOG, K
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(05)
: 625
-
632
[10]
THEIS TN, 1988, IN PRESS I PHYSICS C
←
1
→