Interband transitions in SnxGe1-x alloys

被引：296

作者：

He, G

Atwater, HA

机构：

[1] Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.79.1937

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optical absorption measurements for diamond cubic SnxGe1-x alloy films indicate strong interband transitions with a change in direct energy gap of 0.35 < E-g, < 0.80 eV for 0.15 > x > 0. The optical energy gap undergoes an indirect to direct transition in this composition range and decreases much faster with Sn content than predicted by tight binding and pseudopotential calculations in the virtual crystal approximation.

引用

页码：1937 / 1940

页数：4

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