Shallow donors in epitaxial GaN

被引：18

作者：

Fischer, S ^{[1
]}

Volm, D ^{[1
]}

Kovalev, D ^{[1
]}

Averboukh, B ^{[1
]}

Graber, A ^{[1
]}

Alt, HC ^{[1
]}

Meyer, BK ^{[1
]}

机构：

[1] TECH UNIV MUNICH,PHYS DEPT E16,D-85747 GARCHING,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

gallium nitride; exciton; donor; photoluminescence; infrared absorption;

D O I：

10.1016/S0921-5107(96)01863-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) of GaN is commonly dominated by the annihilation of excitons bound to a 34.5 meV deep donor appearing at 3.472 eV (for strain free GaN at 4 K), With PL we were able to resolve two additional donor bound exciton transitions. The excitons have localization energies of 3.7 +/- 0.3 and 11.3 +/- 05 meV. respectively. Using Haynes rule the respective donors lie 56.5 and 18.5 meV below the conduction band. The applicability of Haynes rule could nicely be confirmed by IR absorption where the 1s-2p transition of the 34.5 and 58 meV donor are observed. The issue of residual donors in GaN will be discussed in this contest. (C) 1997 Elsevier Science S.A.

引用

页码：192 / 195

页数：4

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