Phase formations and ferroelectric properties of PLT thin films by MOCVD

被引：8

作者：

Lee, SS ^{[1
]}

Kim, HG ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,TAEJON 305701,SOUTH KOREA

来源：

INTEGRATED FERROELECTRICS | 1996年 / 12卷 / 2-4期

关键词：

PLT; ferroelectric; MOCVD;

D O I：

10.1080/10584589608013051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

La-modified lead titanate, Pb1-xLaxTiO3(PLT), thin films were prepared on Si[100] and Pt/SiO2/Si substrates by the low-pressure metalorganic chemical vapor deposition (LP MOCVD) method with the hot wall type. The PLT films were deposited at 500 degrees C with the low-pressure of 0.1 Torr, and then annealed at 650 degrees C with an oxygen ambient for 10 minutes. Irrespective of substrate properties and La molar fractions, the films revealed the [100] preferred-orientation. With increasing the La mole %(up to 34%) in the films, the surface morphology improved, and the ferroelectricity and the leakage current density decreased. On the other hand, up to the La 22 mole%, the relative dielectric constant increased from 900 to 1200.

引用

页码：83 / &

页数：11

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