Photobleachable silicon-containing molecular resist for deep UV lithography

被引:25
作者
Kim, Jin-Baek
Ganesan, Ramakrishnan
Choi, Jae-Hak
Yun, Hyo-Jin
Kwon, Young-Gil
Kim, Kyoung-Seon
Oh, Tae-Hwan
机构
[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea
[3] Korea Atom Energy Res Inst, Adv Radiat Technol Inst, Jeonlabukdo 580185, South Korea
关键词
D O I
10.1039/b606937a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A novel molecular resist material based on polyhedral oligomeric silsesquioxane, possessing diazoketo groups, was successfully synthesized for deep UV lithography. The initial lithographic evaluation of the molecular resist shows the potential of the new platform for the next generation resists.
引用
收藏
页码:3448 / 3451
页数:4
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