Piezoelectric thin films for MEMS

被引：142

作者：

Muralt, P

机构：

[1] Laboratoire de Céramique, Federal Institute of Technology, Lausanne

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

piezoelectricity; thin films; sensors; actuators;

D O I：

10.1080/10584589708013004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A short overview is given on deposition and integration of PZT thin films on silicon for MEMS applications. The application principles are explained and the piezoelectric coefficients are compared with the ones of AlN and ZnO. The materials figure of merits are given for various applications and discussed. The coupling coefficient for ultrasonic applications is treated in more detail.

引用

页码：297 / 307

页数：11

共 35 条

[1]

Al-Shareef H. N., 1993, Integrated Ferroelectrics, V3, P321, DOI 10.1080/10584589308216687

[2] FORCE-CONSTANT AND EFFECTIVE MASS OF 90-DEGREES DOMAIN-WALLS IN FERROELECTRIC CERAMICS [J].