Temperature and light dependent diode current in high-efficiency solution-processed small-molecule solar cells

被引：7

作者：

Brus, V. V. ^{[1
]}

Kyaw, A. K. K. ^{[2
]}

Maryanchuk, P. D. ^{[1
]}

Zhang, J. ^{[2
]}

机构：

[1] Chernivtsi Natl Univ, Dept Elect & Energy Engn, UA-58012 Chernovtsy, Ukraine

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

ORGANIC ELECTRONICS | 2014年 / 15卷 / 09期

关键词：

Bulk heterojunction; Solar cell; Current transport; Surface states; POLYMER PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; RECOMBINATION; TRANSPORT;

D O I：

10.1016/j.orgel.2014.06.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the detail analysis of the DC electrical and photoelectrical properties of the high-efficient (eta = 8.01% under standard 100 mW/cm(2) AM1.5 illumination) small molecule bulk heterojunction (SM BHJ) solar cells p-DTS(FBTTh2)(2)/PC70BM. In this SM BHJ solar cell, the dark diode current is determined by the multistep tunnel-recombination via interface states at low forward bias (V < 0.65 V) and the interface state assisted thermionic emission at high forward bias (V > 0.65 V). The effect of illumination on the diode current was also quantitatively investigated. It was observed a reduced Shockley-Read-Hall recombination via interface states at large forward bias (from the maximum power point to the open-circuit conditions). The expression of the load I-V characteristic of the illuminated high-efficient SM BHJ solar cells was derived in the presence of the light dependent series and shunt resistance. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：2141 / 2147

页数：7

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