Effect of sodium and oxygen doping on the conductivity of CuInS2 thin films

被引:9
作者
Scheer, R
Luck, I
Kanis, M
Kurps, R
Krüger, D
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[2] Inst Halbleitertphys, D-15230 Frankfurt, Germany
关键词
chalcopyrite; CuInS2; doping; oxidation; conductivity;
D O I
10.1016/S0040-6090(99)00843-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Doping of Cu-poor CuInS2 thin films by sodium and oxygen species, such as O-2 and O, was investigated by SIMS and conductivity measurements. Increased oxygen concentration is found for Na-doping. The SIMS signals of CuO and CuOS were detected. They coincide for O-doped films but differ for Na and O-2 doped films. This is interpreted as due to grain boundary effects. Na doping lends to an increase in lateral conductivity. This finding supports the model previously proposed by [L. Kronik, D. Cahen, H.W. Schock, Adv. Mater. 10(1998)31] that oxygen plays a major role in Na doping. The presented results. furthermore, propose oxygen single doping for chalcopyrite films. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:468 / 472
页数:5
相关论文
共 12 条
[1]  
[Anonymous], 1994, 12th European Photovoltaic Solar Energy Conference
[2]  
[Anonymous], 1994, Proceedings of the 12th European Photovoltaic Solar Energy Conference
[3]   HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR-CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS [J].
GABOR, AM ;
TUTTLE, JR ;
ALBIN, DS ;
CONTRERAS, MA ;
NOUFI, R ;
HERMANN, AM .
APPLIED PHYSICS LETTERS, 1994, 65 (02) :198-200
[4]   Electrical properties of Na-incorporated Cu(In1-xGax)(3)Se-5 thin films [J].
Kohara, N ;
Negami, T ;
Nishitani, M ;
Hashimoto, Y ;
Wada, T .
APPLIED PHYSICS LETTERS, 1997, 71 (06) :835-837
[5]  
Kronik L, 1998, ADV MATER, V10, P31, DOI 10.1002/(SICI)1521-4095(199801)10:1<31::AID-ADMA31>3.0.CO
[6]  
2-3
[7]   Direct observation of Na and O impurities at grain surfaces of CuInSe2 thin films [J].
Niles, DW ;
Al-Jassim, M ;
Ramanathan, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01) :291-296
[8]  
PROBST V, 1996, P MAT RES SOC SPRING, P165
[9]  
ROCKETT A, 1996, P 25 IEEE PHOT SPEC, P164
[10]  
SCOFIELD JH, 1994, P 1 WORLD C PHOT EN, P164