Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

被引:191
作者
Cho, Doohee [1 ,2 ]
Cheon, Sangmo [1 ,2 ]
Kim, Ki-Seok [2 ]
Lee, Sung-Hoon [1 ,2 ]
Cho, Yong-Heum [2 ,3 ,4 ]
Cheong, Sang-Wook [3 ,4 ,5 ,6 ]
Yeom, Han Woong [1 ,2 ]
机构
[1] Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, 77 Cheongam Ro, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 790784, South Korea
[3] Pohang Univ Sci & Technol, Lab Pohang Emergent Mat, Pohang 790784, South Korea
[4] Pohang Univ Sci & Technol, Max Planck POSTECH Ctr Complex Phase Mat, Pohang 790784, South Korea
[5] Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA
[6] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
来源
NATURE COMMUNICATIONS | 2016年 / 7卷
关键词
DENSITY WAVES; PHASE; GAP; TRANSITION; DRIVEN;
D O I
10.1038/ncomms10453
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
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页数:6
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