Strong ultraviolet and green emissions at room temperature from annealed ZnO thin films

被引：31

作者：

Agyeman, O

Xu, CN ^{[1
]}

Shi, WS

Zheng, XG

Suzuki, M

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, Japan

[2] Saga Univ, Dept Phys, Saga 8408502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2A期

关键词：

ZnO; photoluminescence; ultraviolet; annealing; thin film; crystallinity;

D O I：

10.1143/JJAP.41.666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped ZnO thin films were grown by rf magnetron sputtering on quartz-glass substrates and thermally annealed under various conditions such as in vacuum, reducing gas (5% H-2 diluted in Ar), oxygen and argon ambient, up to 1100 degreesC. We observed a strong excitonic (UV) emission peak around 3.26 eV, when the films were annealed in the reducing ambient whilst the films annealed in argon and oxygen showed strong deep-level emission peaks. The dependence of the UV and visible emissions on the film crystallinity and annealing is discussed.

引用

页码：666 / 669

页数：4

共 20 条

[1] Preparation and characteristics of ZnO thin films deposited on glass substrates [J].