Site-selective deposition and micropatterning of zirconia thin films on templates of self-assembled monolayers

被引：26

作者：

Gao, YF ^{[1
]}

Masuda, Y ^{[1
]}

Yonezawa, T ^{[1
]}

Koumoto, K ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2002年 / 110卷 / 05期

关键词：

site-selective deposition; micropatterning; zirconia; thin film; self-assembled monolayer; gate dielectric; MOS device;

D O I：

10.2109/jcersj.110.379

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zirconia thin films were successfully micropatterned on octadecyltrichlorosilane (OTS)-self-assembled monolayers (SAM) in ZrOCl2.8H(2)O-ethanol solution at room temperature. OTS-SAM was modified by UV-irradiation through a photomask to change into a SAM template patterned with silanol and octadecyl groups. The films were selectively deposited in the silanol regions through hydration-alcoholysis and condensation reactions. The as-deposited film was amorphous with a complex composition, decomposed into tetragonal-zirconia at 500degreesC, and further transformed into monoclinic-zirconia at 600degreesC. The as-deposited film demonstrated a dielectric permittivity of 14 at 100 kHz, but a resistivity of 3.1 x 10(11) Omegacm and a leakage current density of 9.0 x 10(-7) Acm(-2) obtained for a MOS device indicated that the film quality needed to be improved.

引用

页码：379 / 385

页数：7

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