High-current nanotube transistors

被引：127

作者：

Seidel, R ^{[1
]}

Graham, AP

Unger, E

Duesberg, GS

Liebau, M

Steinhoegl, W

Kreupl, F

Hoenlein, W

机构：

[1] Infineon Technol AG, Corp Res, D-81730 Munich, Germany

[2] Tech Univ Dresden, Inst Werkstoffwissensch, D-01062 Dresden, Germany

来源：

NANO LETTERS | 2004年 / 4卷 / 05期

关键词：

D O I：

10.1021/nl049776e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Planar field effect transistors (FET) consisting of a large number of parallel single-walled carbon nanotubes (SWCNT) have been fabricated that allow very high on-currents of the order of several milliamperes and on/off ratios exceeding 500. With these devices it is demonstrated, for the first time, that SWCNTs can be used as transistors to control macroscopic devices, e.g., light emitting diodes and electromotors. Those transistors were fabricated by a very simple process that is based on the catalytic chemical vapor deposition (CCVD) growth of SWCNTs at low temperatures, a single lithographic step to define the source and drain contacts, and a bias pulse to eliminate the metallic SWCNTs.

引用

页码：831 / 834

页数：4

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