Nitrogen doping of amorphous carbon surfaces

被引:33
作者
Kaukonen, M
Nieminen, RM
Pöykkö, S
Seitsonen, AP
机构
[1] Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland
[2] NEC Res Inst, Princeton, NJ 08540 USA
[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[4] Univ Rome La Sapienza, Dipartimento Fis, INFM, Unita Roma, I-00185 Rome, Italy
关键词
D O I
10.1103/PhysRevLett.83.5346
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The surface properties of amorphous carbon (a-C) an studied using first-principles electronic structure methods. The effect of nitrogen doping near the surface and, in paritcular, the effect of nitrogen on the work function is studied by doing a series of nitrogen substitutions near the surface. It is found that the work function is reduced by nitrogen doping of the a-C surface at "on top of the surface" sp(1) and sp(2) sites. Nitrogen doping by low energy ion bombardment is suggested as a doping method to minimize work function of the a-C surfaces.
引用
收藏
页码:5346 / 5349
页数:4
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