Cobalt-substituted SnO2 thin films:: A transparent ferromagnetic semiconductor

被引：44

作者：

Gopinadhan, K. ^{[1
]}

Pandya, Dinesh K. ^{[1
]}

Kashyap, Subhash C. ^{[1
]}

Chaudhary, Sujeet ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Thin Film Lab, New Delhi 110016, India

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 12期

关键词：

D O I：

10.1063/1.2204328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A maximum room temperature ferromagnetic moment of 0.47 mu(B)/Co ion has been observed in Sn0.9Co0.1O2-delta films grown by spray pyrolysis. The films have high conductivity (similar to 150 Omega(-1) cm(-1)) and similar to 70% transmittance in the visible region. A systematic variation of saturation magnetization, carrier concentration, electrical conductivity, and optical transmission edge in Sn1-xCoxO2-delta (0.05 <= x <= 0.15) films is correlated with the change in Co concentration, and a carrier mediated Ruderman-Kittel-Kasuya-Yoshida interaction has been proposed as the most probable mechanism for the ferromagnetic ordering. The maximum blueshift in the transmission edge by similar to 215 meV (at x=0.10) is attributed to the extra carriers generated by Co substitution. (c) 2006 American Institute of Physics.

引用

页数：3

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