DLTS study of silicon-on-insulator structures irradiated with electrons or high-energy ions

被引：3

作者：

Antonova, IV ^{[1
]}

Stano, J ^{[1
]}

Naumova, OV ^{[1
]}

Skuratov, VA ^{[1
]}

Popov, VP ^{[1
]}

机构：

[1] Russian Acad Sci, Novosibirsk 630090, Russia

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 03期

关键词：

electron irradiation; high-energy ion irradiation; interface traps; radiation defects; silicon-on-insulator (SOI);

D O I：

10.1109/TNS.2004.829367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of deep-level transient spectroscopy (DLTS) study of radiation defects in silicon layers, Si/SiO2 interface traps, and a charge in buried oxide formed under irradiation with 2.0 MeV electrons (10(5)-10(6) rad.) or 245 MeV Kr (2.2 x 10(8) cm(-2) and 1.4 x 10(9) cm(-2)) ions in silicon-on-insulator (SOI) structures are presented and discussed. SOI was fabricated by the wafer bonding and hydrogen cutting. It was found that electron irradiation leads to transformation of energy spectrum of the interface traps (relaxation of the bonded interface) in SOL The main effect of high-energy Kr ion irradiation consists in formation of radiation defects in the top silicon layer as well as in the substrate. The fixed positive charge is introduced in the buried oxide under irradiation in both cases.

引用

页码：1257 / 1261

页数：5