DEFECT DISTRIBUTION NEAR-SURFACE OF ELECTRON-IRRADIATED SILICON

被引：53

作者：

WANG, KL

LEE, YH

CORBETT, JW

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,ALBANY,NY 12222

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 06期

关键词：

D O I：

10.1063/1.90440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：547 / 548

页数：2

共 13 条

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[7]

URLI NB, 1977, RAD EFFECTS SEMICOND

[8] ENTHALPY OF VACANCY MIGRATION IN SI AND GE [J].

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1974, 10 (04) :1482-1505

[9] PROPERTIES OF 1.0-MEV-ELECTRON-IRRADIATED DEFECT CENTERS IN SILICON [J].

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SAH, CT .

PHYSICAL REVIEW B, 1973, 7 (10) :4587-4605

[10] DEFECT SPATIAL DISTRIBUTIONS IN ANNEALED ION-IMPLANTED SILICON MEASURED BY A TRANSIENT CAPACITANCE TECHNIQUE [J].

WANG, KL .

APPLIED PHYSICS LETTERS, 1976, 29 (11) :700-702

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