DEFECT SPATIAL DISTRIBUTIONS IN ANNEALED ION-IMPLANTED SILICON MEASURED BY A TRANSIENT CAPACITANCE TECHNIQUE

被引：38

作者：

WANG, KL ^{[1
]}

机构：

[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 11期

关键词：

D O I：

10.1063/1.88931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：700 / 702

页数：3

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