Growth and characterization of strained superlattices δ-GaNxAs1-x/GaAs by molecular beam epitaxy

被引:22
作者
Pan, Z [1 ]
Li, LH [1 ]
Lin, YW [1 ]
Zhou, ZQ [1 ]
Zhang, W [1 ]
Wang, YT [1 ]
Wu, RH [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
关键词
GaNAs/GaAs superlattice; X-ray diffraction; periodicity fluctuation; MBE; RHEED;
D O I
10.1016/S0022-0248(99)00625-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N-2-assisted molecular beam epitaxy. The evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron diffraction. The superlattices have been characterized by high-resolution X-ray diffraction measurements. Distinct satellite peaks indicate that the superlattices are of good quality. The N compositions in strained GaNxAs1-x monolayers are obtained from the dynamical simulations of the measured X-ray diffraction patterns. The periodicity fluctuations of N composition are obtained from a kinematical method dependent on the broadening of the satellite peaks of the X-ray diffraction. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:648 / 652
页数:5
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