Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography

被引：12

作者：

Eder-Kapl, S

Loeschner, H

Zeininger, M

Fallmann, W

Kirch, O

Patsis, GP

Constantoudis, V

Gogolides, E

机构：

[1] IMS Nanofabricat GmbH, A-1020 Vienna, Austria

[2] Vienna Tech Univ, Inst Ind Elektron & Mat Wissensch, A-1040 Vienna, Austria

[3] Infineon Technol AG, MP TI TD PMT, D-91050 Erlangen, Germany

[4] NCSR Demokritos, IMEL, GR-15310 Athens, Greece

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

line edge roughness; shot noise; analysis of variance; scaling analysis; ion beam lithography;

D O I：

10.1016/j.mee.2004.02.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis approach provided the correlation length and the roughness exponent. The results indicate that for exposure doses >2.5 muC/cm(2) LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：252 / 258

页数：7

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