Modeling of edge roughness in ion projection lithography

被引：27

作者：

Henke, W ^{[1
]}

Torkler, M ^{[1
]}

机构：

[1] Fraunhofer Inst Siliziumtechnol, D-25524 Itzehoe, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.590963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To investigate causes and cures for resist profile edge roughness in ion projection lithography a model for exposure and development of chemically amplified resist exposed with He+ or H+ ions is described. The APEX-E resist system was chosen as a paradigm system. Predominant factors increasing line edge roughness are image blur and low exposure dose. Both effects result in formation of ion clusters in nominally unexposed regions close to feature edges. These clusters can lead to statistically distributed development paths and consequently to line edge roughness; (C) 1999 American Vacuum Society. [S0734-211X(99)17506-1].

引用

页码：3112 / 3118

页数：7

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