UV laser ablation of halonaphthalene doped PMMA: chemical modifications above versus below the ablation threshold

被引:12
作者
Athanassiou, A
Andreou, E
Anglos, D
Georgiou, S
Fotakis, C
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Heraklion 71110, Crete, Greece
[2] Univ Salford, Dept Phys, Greater Manchester, England
[3] Univ Ioannina, Dept Phys, GR-45110 Ioannina, Greece
[4] Univ Crete, Dept Phys, Heraklion, Crete, Greece
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期
关键词
D O I
10.1007/s003390051401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Laser-induced fluorescence is employed to monitor the photochemical modifications that bromo- and iodon- aphthalene incorporated in PMMA films undergo following ablation at 248 nm. Following irradiation at low fluences with nanosecond pulses, photolysis of the dopants is found to result in the formation of naphthalene-like photoproducts, whereas above the threshold additional products are observed. Based on concentration studies, these are tentatively ascribed to species containing two naphthyl groups. In close correspondence to the formation of the new species, the photolysis yields for both dopants are found to increase sharply above the threshold. Finally, the nature and extent of these photochemical effects is indicated to depend sensitively on the laser pulse width. The mechanistic implications of these results are discussed.
引用
收藏
页码:S285 / S289
页数:5
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