Evaluation and analysis for mechanical strengths of low k dielectrics by a finite element method

被引：24

作者：

Aoi, N ^{[1
]}

Fukuda, T ^{[1
]}

Yanazawa, H ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, Semicond Technol Res Dept, Environm Process Technol Lab, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We evaluated elastic modulus of various porous and nonporous inorganic low-k films by means of a nano-indentation...Elastic modulus of various low-k films shows a linear dependence on the film density for porous and nonporous inorganic low-k materials, respectively. We have studied the effect of pore aggregation on elastic modulus of thin films by a finite element method (FEM) using the 2-dimensional random pore generation model. FEM Results of elastic modulus, which were calculated for 2-dimensional random pore model, extremely well fit with the experimental data obtained by a nano-indentation method.

引用

页码：72 / 74

页数：3

共 4 条

[1]

AOI N, 2001, MRS SPRING M, P23

[2]

Bohr MT, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P241, DOI 10.1109/IEDM.1995.499187

[3] A super low-k (k=1.1) silica aerogel film using supercritical drying technique [J].

Kawakami, N ;

Fukumoto, Y ;

Kinoshita, T ;

Suzuki, K ;

Inoue, K .

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, :143-145

[4] Low-k dielectrics characterization for Damascene integration [J].

Lin, S ;

Jin, CM ;

Lui, L ;

Tsai, MS ;

Daniels, M ;

Gonzalez, A ;

Wetzel, JT ;

Monnig, KA ;

Winebarger, PA ;

Jang, S ;

Yu, D ;

Liang, MS .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :146-148

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