Effective work function modification of atomic-layer-deposited-TaN film by capping layer

被引：42

作者：

Choi, K. ^{[1
]}

Alshareef, H. N. ^{[1
]}

Wen, H. C. ^{[1
]}

Harris, H. ^{[1
]}

Luan, H. ^{[1
]}

Senzaki, Y. ^{[1
]}

Lysaght, P. ^{[1
]}

Majhi, P. ^{[1
]}

Lee, B. H. ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 03期

关键词：

D O I：

10.1063/1.2234288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

[1]

ALSHAREEF HN, 2005, FUTURE FAB, V19, P91

[2] Gate length scaling and threshold voltage control of double-gate MOSFETs. [J].

Chang, L ;

Tang, S ;

King, TJ ;

Bokor, J ;

Hu, C .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :719-722

[3]

Hauser JR, 1998, AIP CONF PROC, V449, P235

[4]

Hobbs C., 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), P9, DOI 10.1109/VLSIT.2003.1221060

[5] Feasibility of using W/TiN as metal gate for conventional 0.13μm CMOS technology and beyond [J].

Hu, JC ;

Yang, H ;

Kraft, R ;

Rotondaro, ALP ;

Hattangady, S ;

Lee, WW ;

Chapman, RA ;

Chao, CP ;

Chatterjee, A ;

Hanratty, M ;

Rodder, M ;

Chen, IC .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :825-828

[6]

JEON IS, 2004, VLSI S, P303

[7] Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications [J].

Kang, CS ;

Cho, H ;

Kim, YH ;

Choi, R ;

Onishi, K ;

Shahriar, A ;

Lee, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (05) :2026-2028

[8] Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition [J].

Kim, H ;

Kellock, AJ ;

Rossnagel, SM .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7080-7085

[9]

KIM YH, 2001, IEDM, P667

[10] The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs [J].

Pan, J ;

Woo, C ;

Ngo, MV ;

Xie, J ;

Matsumoto, D ;

Murthy, D ;

Goo, JS ;

Xiang, Q ;

Lin, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (04) :581-586

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