Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

被引：87

作者：

Kang, CS ^{[1
]}

Cho, H ^{[1
]}

Kim, YH ^{[1
]}

Choi, R ^{[1
]}

Onishi, K ^{[1
]}

Shahriar, A ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78768 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 05期

关键词：

D O I：

10.1116/1.1603285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tantalum nitride (TaN) films were prepared by reactive sputtering in a gas Ar and N-2 for gate electrode applications. Resistivity, crystallinity, and work function of the films were investigated as a function of nitrogen flow rate. As the nitrogen flow rate increased from 0 to 20 sccm, the resistivity of as-deposited TaN films increased from 132 to 1.4 x 10(5) muOmega cm. With a nitrogen flow rate of 8 and 10 sccm, the fcc TaN phase was obtained. The work function of the TaN films was investigated using TaN-gated nmetal-oxide-semiconductor capacitors with SiO2 gate dielectrics of various thicknesses. As the nitrogen flow rate increased from 4 to 12 sccm, the work function decreased from 4.1 to 3.4 eV for as-deposited films. After annealing at 950 degreesC for 1 min, the work function increased to 4.5-4.7 eV, with less dependency on the nitrogen flow rate. (C) 200 American Vacuum Society.

引用

页码：2026 / 2028

页数：3

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