Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics

被引：45

作者：

Nieh, R ^{[1
]}

Choi, R ^{[1
]}

Gopalan, S ^{[1
]}

Onishi, K ^{[1
]}

Kang, CS ^{[1
]}

Cho, HJ ^{[1
]}

Krishnan, S ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1504165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of silicon surface nitridation on metal-oxide-semiconductor capacitors with zirconium oxide (ZrO2) gate dielectrics were investigated. Surface nitridation was introduced via ammonia (NH3) annealing prior to ZrO2 sputter-deposition, and tantalum nitride (TaN) was used for the gate electrode. It was found that capacitors with the nitridation had thinner equivalent oxide thickness (similar to8.7 Angstrom), comparable leakage current, and slightly increased capacitance-voltage hysteresis as compared to samples without nitridation. Additionally, transmission electron microscopy pictures revealed that nitrided samples had a thicker interfacial layer (IL), which had a higher dielectric constant than that of the non-nitrided IL. (C) 2002 American Institute of Physics.

引用

页码：1663 / 1665

页数：3

共 12 条

[1] Oxygen exchange and transport in thin zirconia films on Si(100) [J].

Busch, BW ;

Schulte, WH ;

Garfunkel, E ;

Gustafsson, T ;

Qi, W ;

Nieh, R ;

Lee, J .

PHYSICAL REVIEW B, 2000, 62 (20) :R13290-R13293

[2] High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation [J].

Choi, R ;

Kang, CS ;

Lee, BH ;

Onishi, K ;

Nieh, R ;

Gopalan, S ;

Dharmarajan, E ;

Lee, JC .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :15-16

[3]

Fleetwood DM, 1996, IEEE T NUCL SCI, V43, P779, DOI 10.1109/23.510713

[4]

Hauser JR, 1998, AIP CONF PROC, V449, P235

[5]

HORI T, 1997, GATE DIELECTRICS MOS, P236

[6] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[7]

KOYAMA M, 2001, THERMALLY STABLE ULT, P459

[8]

LEE BH, 2001, TECH DIG INT EL DEV, P39

[9] MOS devices with high quality ultra thin CVD ZrO2 Gate dielectrics and self-aligned TaN and TaN/poly-Si gate electrodes [J].

Lee, CH ;

Kim, YH ;

Luan, HF ;

Lee, SJ ;

Jeon, TS ;

Bai, WP ;

Kwong, DL .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :137-138

[10] Comparison between ultra-thin ZrO2 and ZrOxNy gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices [J].

Nieh, R ;

Krishnan, S ;

Cho, HJ ;

Kang, CS ;

Gopalan, S ;

Onishi, K ;

Choi, R ;

Lee, JC .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :186-187

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