Molecular clusters as building blocks for nanoelectronics: the first demonstration of a cluster single-electron tunnelling transistor at room temperature

被引:51
作者
Gubin, SP [1 ]
Gulayev, YV
Khomutov, GB
Kislov, VV
Kolesov, VV
Soldatov, ES
Sulaimankulov, KS
Trifonov, AS
机构
[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 101999, Russia
[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
[4] Natl Acad Sci, Inst Chem & Chem Technol, Bishkek 720071, Kyrgyzstan
关键词
D O I
10.1088/0957-4484/13/2/311
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work is the result of coherent effort of a multi-disciplinary research team working for a considerable number of years in the former USSR in the area of nanocluster molecular electronics. For the first time the successful demonstration of a single-electron tunnelling transistor working reliably at room temperature and based on a single molecular metallorganic cluster is presented. A broad spectrum of different molecular clusters was investigated. Our group has developed a complete cycle of custom-designed molecular cluster manufacturing, deposition, characterization and modification of nanoelectronic devices based on a single molecular cluster. It was shown that the atomic and electronic structure of nanoclusters containing from 3 up to 23 metal atoms had no crucial importance for the transistor fabrication. At the same time extensive research into characteristics of nanoelectronic devices based on single molecular clusters and their tunnelling properties is summarized.
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收藏
页码:185 / 194
页数:10
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