77 K single electron transistors fabricated with 0.1 mu m technology

被引:21
作者
Altmeyer, S
Hamidi, A
Spangenberg, B
Kurz, H
机构
[1] Inst. of Semiconduct. Electronics II, 52074 Aachen
关键词
D O I
10.1063/1.365374
中图分类号
O59 [应用物理学];
学科分类号
摘要
Metal based single electron transistors are fabricated by the step edge cut off process. Titanium metal lines with a width of 0.1 mu m are deposited on prepatterned silicon substrates, that serve as the dielectric barriers for the tunnel junctions. In structures with multiple tunnel junctions, clear Coulomb blockade and Coulomb oscillation features can be observed at temperatures up to 77 K. (C) 1997 American Institute of Physics.
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收藏
页码:8118 / 8120
页数:3
相关论文
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