Electrochemical formation of GaAs/Bi Schottky barriers

被引：18

作者：

Vereecken, PM ^{[1
]}

Searson, PC ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 20期

关键词：

D O I：

10.1063/1.125255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth layers have been deposited electrochemically on (100) n- and p-type GaAs. The electrical properties of junctions on n-GaAs were dependent on the bismuth deposition potential. Bismuth films deposited at -0.2 V (Ag/AgCl) were compact, continuous, and exhibited good adhesion; the n-GaAs/Bi junctions exhibited an average barrier height of 0.83 eV. Films deposited at less than or equal to-0.3 V were porous and the barrier heights exhibited an aging effect decreasing to 0.73 eV after several days under ambient conditions. Bismuth films deposited on p-GaAs exhibited barrier heights of 0.57 eV. The sum of the barrier heights for n- and p-type junctions correspond to 1.40 eV, close to the band gap of GaAs consistent with Fermi-level pinning. (C) 1999 American Institute of Physics. [S0003-6951(99)00646-4].

引用

页码：3135 / 3137

页数：3

共 23 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[2] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[3] Surface composition of n-GaAs cathodes during hydrogen evolution characterized by in situ ultraviolet-visible ellipsometry and in situ infrared spectroscopy [J].

Erne, BH ;

Stchakovsky, M ;

Ozanam, F ;

Chazalviel, JN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (02) :447-456

[4] CHARACTERIZATION OF SURFACE-LAYERS ON GAAS SINGLE-CRYSTALS IN CONTACT WITH ACID AQUEOUS-SOLUTIONS [J].

LINGIER, S ;

GOMES, WP .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1991, 95 (02) :170-176

[5] Structural and magneto-transport properties of electrodeposited bismuth nanowires [J].

Liu, K ;

Chien, CL ;

Searson, PC ;

Kui, YZ .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1436-1438

[6] Low-temperature electrical-transport properties of single-crystal bismuth films under pressure [J].

Lu, M ;

Zieve, RJ ;

vanHulst, A ;

Jaeger, HM ;

Rosenbaum, TF ;

Radelaar, S .

PHYSICAL REVIEW B, 1996, 53 (03) :1609-1615

[7] TRANSPORT PROPERTIES OF BISMUTH IN QUANTIZING MAGNETIC-FIELDS [J].

MANGEZ, JH ;

ISSI, JP ;

HEREMANS, J .

PHYSICAL REVIEW B, 1976, 14 (10) :4381-4385

[8] METAL-SEMICONDUCTOR CONTACTS - ELECTRONIC-PROPERTIES [J].

MONCH, W .

SURFACE SCIENCE, 1994, 299 (1-3) :928-944

[9] Summary of Schottky barrier height data on epitaxially grown n- and p-GaAs [J].

Myburg, G ;

Auret, FD ;

Meyer, WE ;

Louw, CW ;

van Staden, MJ .

THIN SOLID FILMS, 1998, 325 (1-2) :181-186

[10] THE ELECTRICAL AND ELECTROCHEMICAL PROPERTIES OF GOLD-PLATED INP [J].

OSKAM, G ;

BART, L ;

VANMAEKELBERGH, D ;

KELLY, JJ .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3238-3245

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