THE ELECTRICAL AND ELECTROCHEMICAL PROPERTIES OF GOLD-PLATED INP

被引：18

作者：

OSKAM, G ^{[1
]}

BART, L ^{[1
]}

VANMAEKELBERGH, D ^{[1
]}

KELLY, JJ ^{[1
]}

机构：

[1] UNIV UTRECHT,DEBYE RES INST,POB 80000,3508 TA UTRECHT,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.354598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of InP/Au dry contacts and the influence of electrodeposited gold on the electrochemical properties of InP electrodes were studied. From current and impedance measurements on InP/Au dry contacts it is concluded that the chemical composition of an interfacial layer strongly influences the electrical characteristics. Furthermore, interface states are shown to play an important role. The interfacial layer and the interface states also determine to a large extent the electrochemical properties of the gold-plated electrodes.

引用

收藏

页码：3238 / 3245

页数：8

相关论文

共 29 条

[1] INSITU STUDIES OF THE ANODIC-OXIDATION OF INDIUM-PHOSPHIDE [J].

BESLAND, MP ;

ROBACH, Y ;

JOSEPH, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) :104-108

[2] HOT-ELECTRON REDUCTION AT N-SI/AU THIN-FILM ELECTRODES [J].

CHEN, C ;

FRESE, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) :3243-3249

[3] INTERACTION OF GOLD WITH INP(100)4X2 SURFACES [J].

ENGELHARD, H ;

SCHAEFER, JA ;

STIETZ, F ;

GOLDMANN, A ;

FELLENBERG, R ;

BRAUN, W .

SURFACE SCIENCE, 1992, 276 (1-3) :21-26

[4] A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODES [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1966-1975

[5] OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3597-3602

[6] METAL INP INTERFACE AND SCHOTTKY DIODE FORMATION [J].

ISMAIL, A ;

PALAU, JM ;

LASSABATERE, L .

REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (03) :205-214

[7] INP METAL-INSULATED-SEMICONDUCTOR SCHOTTKY CONTACTS USING SURFACE OXIDE LAYERS PREPARED WITH BROMINE WATER [J].

KAMIMURA, K ;

SUZUKI, T ;

KUNIOKA, A .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4905-4907

[8] FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T) [J].

LEHOVEC, K .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :48-&

[9] METAL CONTACTS TO OXYGEN-CONTAMINATED SILICON SURFACES [J].

MOTTRAM, JD ;

NORTHROP, DC ;

REED, CM ;

THANAILAKIS, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (05) :773-786

[10] ELECTRICAL STUDY OF SCHOTTKY-BARRIER HEIGHTS ON ATOMICALLY CLEAN P-TYPE INP(110) SURFACES [J].

NEWMAN, N ;

VANSCHILFGAARDE, M ;

SPICER, WE .

PHYSICAL REVIEW B, 1987, 35 (12) :6298-6304