Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates

被引：2

作者：

Boudaa, M ^{[1
]}

Regreny, P

Leclercq, JL

Besland, MP

Marty, O

Hollinger, G

机构：

[1] Ecole Cent Lyon, CNRS, UMR 5512, LEOM, F-69134 Ecully, France

[2] Univ Lyon 1, LENAC, F-69621 Villeurbanne, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2004年 / 33卷 / 07期

关键词：

strain relaxation; lattice-engineered substrate; heteroepitaxy; InGaAs;

D O I：

10.1007/s11664-004-0250-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a technological process that can be used to prepare strain-relaxed InAsP/InGaAs bilayer membranes, 0.8% lattice mismatched to InP substrates, with diameters up to 300 mum. It is shown that high-quality thick In0.65Ga0.35As layers can be grown fully relaxed on these membranes, without any structural defect, as demonstrated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) characterizations. The critical thickness of InAs layers grown on InAS(0.25)P(0.75) templates is enhanced from 15 Angstrom to 60 Angstrom when compared to InP substrates.

引用

页码：833 / 839

页数：7

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