High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

被引：9

作者：

Damlencourt, JF ^{[1
]}

Leclercq, JL ^{[1
]}

Gendry, M ^{[1
]}

Regreny, P ^{[1
]}

Hollinger, G ^{[1
]}

机构：

[1] Ecole Cent Lyon, LEOM, CNRS, UMR 5512, F-69621 Ecully, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin and thick fully relaxed In0.65Ga0.35As layers have been grown on InP substrates (0.81% misfit), with high structural and high optoelectronic quality at an operating wavelength of similar to 2.0 mu m. Full relaxation is achieved, using the paramorphic approach, by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining. (C) 1999 American Institute of Physics. [S0003-6951(99)03049-1].

引用

页码：3638 / 3640

页数：3

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