Use of real-time ion-mass spectrometry and discharge voltage trending for analysis of a-Si DC plasma CVD processes

被引：4

作者：

Ganguly, G ^{[1
]}

Newton, J ^{[1
]}

Carlson, DE ^{[1
]}

Arya, RR ^{[1
]}

机构：

[1] BP Solar, N Amer Technol Ctr, Toano, VA 23168 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(02)00935-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

DC discharge voltage monitoring is a convenient non-intrusive tool for in-line monitoring of plasma-deposited amorphous silicon deposition processes. We discuss the observed variations of the discharge voltage due to (i) changing hydrogen dilution of silane, (ii) etch back of silicon by a hydrogen plasma, (iii) admixing of germane and methane and correlate the results with in situ ion-mass spectroscopy, We suggest that negative ion formation by electron attachment to silane and/or higher-silane species causes the changes of discharge voltage. Time dependences following discharge initiation are discussed in terms of the relative concentrations of silane versus higher-silane species. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：53 / 57

页数：5

共 6 条

[1] CAUSES OF SIH4 DISSOCIATION IN SILANE DC DISCHARGES [J].