Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges

被引:9
作者
Kawasaki, H [1 ]
Kida, J [1 ]
Sakamoto, K [1 ]
Fukuzawa, T [1 ]
Shiratani, M [1 ]
Watanabe, Y [1 ]
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect Device Engn, Fukuoka 8128581, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 4B期
关键词
particle; plasma CVD; RF discharge; GeH4; GeH2;
D O I
10.1143/JJAP.37.L475
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm(2). The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 10(10) cm(-3), being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.
引用
收藏
页码:L475 / L477
页数:3
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