Interdiffusions and reactions in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures

被引：21

作者：

Rha, SK ^{[1
]}

Lee, WJ ^{[1
]}

Lee, SY ^{[1
]}

Kim, DW ^{[1
]}

Park, CO ^{[1
]}

Chun, SS ^{[1
]}

机构：

[1] KYONGGI UNIV,DEPT MAT ENGN,SUWON 440760,SOUTH KOREA

来源：

JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 12期

关键词：

D O I：

10.1557/JMR.1997.0441

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sputtered TiN (30-120 nm thick)/Ti (30 nm thick) films were studied as a diffusion barrier between silicon substrate and copper films. The effects of TiN thickness and the existence of a SiO2 layer between Ti and silicon substrate on the diffusion barrier property were investigated using various characterization methods. The copper diffusion barrier property of TiN/Ti was found to be affected not only by the TiN thickness, that is diffusion distance, but also by the microstructure of the TiN, which changes with the thickness of TIN film. The existence of the SiO2 layer enhanced the diffusion barrier property of TiN/Ti. This is because the SiO2 layer between Ti and Si inhibited the formation of titanium silicides, so the Ti layer was available to be used as the sacrificial diffusion barrier for copper.

引用

页码：3367 / 3372

页数：6

共 16 条

[1] ANALYTICAL ELECTRON-MICROSCOPY OF AL/TIN CONTACTS ON SILICON FOR APPLICATIONS TO VERY LARGE-SCALE INTEGRATED DEVICES [J].