Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration

被引：48

作者：

Aoyama, T

Ogawa, K

Mochizuki, Y

Konishi, N

机构：

[1] Hitachi Research Laboratory, Hitachi, Ltd., Ibaraki

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 05期

关键词：

D O I：

10.1109/16.491245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inverse staggered polycrystalline silicon (poly-Si) and hydrogenated amorphous silicon (a-Si:H) double structure thin-film transistors (TFT's) are fabricated based on the conventional a-Si:H TFT process on a single glass substrate, After depositing a thin (20 nm) a-Si:H using the plasma CVD technique at 300 degrees C, Ar+ and XeCl (300 mJ/cm(2)) lasers are irradiated successively, and then a thick a-Si:H (200 nm) and n(+) Si layers are deposited again. The field effect mobilities of 10 and 0.5 cm (2)/V . s are obtained for the Laser annealed poly-Si and the a-Si:H (without annealing) TFT's, respectively.

引用

页码：701 / 705

页数：5

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