Drive-current enhancement in Ge n-channel MOSFET using laser annealing for source/drain activation

被引：47

作者：

Zhang, Qingchun ^{[1
]}

Huang, Jidong

Wu, Nan

Chen, Guoxin

Hong, Minghui

Bera, L. K.

Zhu, Chunxiang

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Laser Microproc Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore

[3] Inst Microelect, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 09期

关键词：

germanium; high-k gate dielectric; laser annealing (LA); MOSFET;

D O I：

10.1109/LED.2006.880655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation.

引用

页码：728 / 730

页数：3

共 16 条

[1] Characteristics of HfO2 pMOSFET prepared by B2H6 plasma doping and KrF excimer laser annealing [J].