Characteristics of HfO2 pMOSFET prepared by B2H6 plasma doping and KrF excimer laser annealing

被引：4

作者：

Baek, S ^{[1
]}

Heo, SH ^{[1
]}

Choi, HJ ^{[1
]}

Hwang, HS ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 03期

关键词：

excimer laser annealing (ELA); HfO2 gate dielectric; metal gate; plasma doping (PLAD); pMOSFETs;

D O I：

10.1109/LED.2004.842438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of RfO(2) pMOSFETs prepared by B2H6 plasma doping and excimer laser annealing were investigated. Various metal gate electrodes were evaluated to protect the high-kappa oxide during laser irradiation. Although the aluminum gate electrode showed superior reflectivity to the laser, the equivalent oxide thickness was increased due to the interaction between aluminum and HfO2, which resulted in reduced capacitance. In contrast, theAl-TaN stacked gate showed good reflectivity up to laser energy of 500 mJ/cm(2) and improved capacitance was obtained compared with the Al gate. For the first time, the electrical characteristics of a HfO2 pMOSFET with an AI-TaN gate fabricated by plasma doping and excimer laser annealing were. demonstrated. It was also demonstrated that plasma doping and excimer laser annealing combined with a metal gate could be applied for high-kappa oxide MOSFET fabrication.

引用

页码：157 / 159

页数：3

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