High fluence ultrafast dynamics of semiconductor saturable absorber mirrors

被引:24
作者
Langlois, P [1 ]
Joschko, M
Thoen, ER
Koontz, EM
Kärtner, FX
Ippen, EP
Kolodziejski, LA
机构
[1] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA
[2] MIT, Dept Phys, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.125474
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors are investigated using reflective pump-probe measurements. At high fluence, ultrafast induced absorption begins to dominate over absorption bleaching. Above the InGaAs quantum well band gap, the differential reflectivity shows a similar to 1 ps transient due to nonequilibrium carrier dynamics. Below band gap, the signal is dominated by a strong two-photon absorption component followed by induced absorption that decays with a time constant of similar to 5 ps; these components are attributed to nonlinear absorption and subsequent carrier diffusion in the InP layer. (C) 1999 American Institute of Physics. [S0003-6951(99)02950-2].
引用
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页码:3841 / 3843
页数:3
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