CHARGE-CARRIER RECOMBINATION AND DIFFUSION IN INGAAS(P) EPITAXIAL LAYERS

被引：6

作者：

JUODKAZIS, S ^{[1
]}

PETRAUSKAS, M ^{[1
]}

QUACHA, A ^{[1
]}

WILLANDER, M ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 140卷 / 02期

关键词：

D O I：

10.1002/pssa.2211400214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The method of picosecond light-induced grating is used for the investigation of non-equilibrium charge carrier dynamics in epitaxial layers of InGaAsP, InGaAs and InP. The carrier recombination time tau(R) and the diffusion coefficient D(a) are determined. The influence of bleaching on the revealed values is discussed.

引用

收藏

页码：439 / 443

页数：5

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