PICOSECOND CARRIER DYNAMICS IN HIGHLY EXCITED INGAAS/INP/INGAASP/INP STRUCTURES

被引：7

作者：

PETRAUSKAS, M

JUODKAZIS, S

NETIKIS, V

WILLANDER, M

OUACHA, A

HAMMARLUND, B

机构：

[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

[2] INST MICROELECTR,STOCKHOLM,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期

关键词：

D O I：

10.1088/0268-1242/7/11/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier dynamics in highly excited In1-xGaxAs/InP/In1-xGaxAsyP1-y/InP structures, with x = 0.47 and y = 0.9, have been investigated by the picosecond dynamic grating technique. The carrier recombination time tau(R) and the ambipolar diffusion coefficient D(a) at a non-equilibrium carrier density of about 10(19) cm-3 have been determined for layers of InGaAs, InP and InGaAsP on InP substrates. The influence of many-body effects and reabsorption of emitted photons on the carrier diffusion at high excitation levels are discussed.

引用

页码：1355 / 1358

页数：4

共 21 条

[1] SURFACE RECOMBINATION VELOCITY AND LIFETIME IN INP [J].