The mutual exclusion of luminescence and transport in nanocrystalline silicon networks

被引：15

作者：

Balberg, I ^{[1
]}

Savir, E ^{[1
]}

Jedrzejewski, J ^{[1
]}

机构：

[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.02.030

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the relation between the connectivity of the silicon network and the photoluminescence (PL) efficiency in co-sputtered Si-SiO2 nanocrystalline composites. The results show that the creation of the large silicon clusters is responsible for the deconfinement of the exited carriers and thus for the time-decay of the PL and the Si content induced quenching of the PL. The prospects of efficient electroluminescence in this system are discussed in terms of the corresponding competition between this quenching and the enhanced transport as the electrical connectivity of the system is improved. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：102 / 105

页数：4

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