Carrier transport in thin films of silicon nanoparticles

被引:92
作者
Burr, TA
Seraphin, AA
Werwa, E
Kolenbrander, KD
机构
[1] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 08期
关键词
D O I
10.1103/PhysRevB.56.4818
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical and electroluminescence characteristics of heterostructure systems. containing thin films of visibly emitting silicon nanoparticles are shown to be controlled by carrier transport through the nanoparticulate films. A conduction mechanism encompassing both geometric and electronic effects most effectively relates the high resistivity with structural properties of the films. Heterostructure devices are constructed with silicon nanoparticle active layers produced by pulsed laser ablation supersonic expansion. The observed temperature-dependent photoluminescence, electroluminescence, and I-V characteristics of the devices are consistent with a model in which carrier transport is controlled by space-charge-limited currents or tunneling through potential barriers on a percolating lattice.
引用
收藏
页码:4818 / 4824
页数:7
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