Low voltage electrowetting-on-dielectric

被引:562
作者
Moon, H
Cho, SK
Garrell, RL
Kim, CJ [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
关键词
D O I
10.1063/1.1504171
中图分类号
O59 [应用物理学];
学科分类号
摘要
This article discusses and experimentally verifies how to lower the operating voltage that drives liquid droplets by the principle of electrowetting on dielectric (EWOD). A significant contact angle change (120degrees-->80degrees) is desired to reliably pump the droplet in microchannels for applications such as lab-on-a-chip or micrototal analysis systems. Typically, much higher voltages (>100 V) are used to change the wettability of an electrolyte droplet on a dielectric layer compared with a conductive layer. The required voltage can be reduced by increasing the dielectric constant and decreasing the thickness of the dielectric layer, thus increasing the capacitance of the insulating layer. This dependence of applied voltage on dielectric thickness is confirmed through EWOD experiments for three different dielectric materials of varying thickness: Amorphous fluoropolymer (Teflon(R) AF, Dupont), silicon dioxide (SiO2) and parylene. The dependence on the dielectric constant is confirmed with two different dielectric materials of similar thickness: SiO2 and barium strontium titanate. In all cases, the surface is coated with a very thin (200 Angstrom) layer of amorphous fluoropolymer to provide initial hydrophobicity. Limiting factors such as the dielectric breakdown and electrolysis are also discussed. By using very thin (700 A) and high dielectric constant (similar to180) materials, a significant contact angle change (120degrees-->80degrees) has been achieved with voltages as low as 15 V. Based on these results, a microfluidic device has been fabricated and tested, demonstrating successful transporting (pumping) of a 460 nL water droplet with only 15 V. (C) 2002 American Institute of Physics.
引用
收藏
页码:4080 / 4087
页数:8
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