Memory Metamaterials

被引：795

作者：

Driscoll, T. ^{[1
]}

Kim, Hyun-Tak ^{[2
]}

Chae, Byung-Gyu ^{[2
]}

Kim, Bong-Jun ^{[2
]}

Lee, Yong-Wook ^{[2
,3
]}

Jokerst, N. Marie ^{[4
,5
]}

Palit, S. ^{[4
,5
]}

Smith, D. R. ^{[4
,5
]}

Di Ventra, M. ^{[1
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] ETRI, Met Insulator Transit Lab, Taejon 305350, South Korea

[3] Pukyong Natl Univ, Sch Elect & Engn, Pusan 608739, South Korea

[4] Duke Univ, Ctr Metamat & Integrated Plasmon, Durham, NC 27708 USA

[5] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

来源：

SCIENCE | 2009年 / 325卷 / 5947期

关键词：

METAL-INSULATOR-TRANSITION; MOTT TRANSITION; MECHANISM;

D O I：

10.1126/science.1176580

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The resonant elements that grant metamaterials their distinct properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically controlled persistent frequency tuning of a metamaterial, which allows the lasting modification of its response by using a transient stimulus. This work demonstrates a form of memory capacitance that interfaces metamaterials with a class of devices known collectively as memory devices.

引用

页码：1518 / 1521

页数：4

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