Phase-transition driven memristive system

被引：318

作者：

Driscoll, T. ^{[1
]}

Kim, H. -T. ^{[2
]}

Chae, B. -G. ^{[2
]}

Di Ventra, M. ^{[1
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] ETRI, MIT Device Team, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

关键词：

metal-insulator transition; resistors; thin films; vanadium compounds; MOTT TRANSITION; MECHANISM; DEVICES; MEMORY; FILMS;

D O I：

10.1063/1.3187531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.

引用

页数：3

共 32 条

[1] Current switching of resistive states in magnetoresistive manganites [J].

Asamitsu, A ;

Tomioka, Y ;

Kuwahara, H ;

Tokura, Y .

NATURE, 1997, 388 (6637) :50-52

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] A hybrid nanomemristor/transistor logic circuit capable of self-programming [J].

Borghetti, Julien ;

Li, Zhiyong ;

Straznicky, Joseph ;

Li, Xuema ;

Ohlberg, Douglas A. A. ;

Wu, Wei ;

Stewart, Duncan R. ;

Williams, R. Stanley .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2009, 106 (06) :1699-1703

[4] Band-selective measurements of electron dynamics in VO2 using femtosecond near-edge x-ray absorption -: art. no. 067405 [J].

Cavalleri, A ;

Rini, M ;

Chong, HHW ;

Fourmaux, S ;

Glover, TE ;

Heimann, PA ;

Kieffer, JC ;

Schoenlein, RW .

PHYSICAL REVIEW LETTERS, 2005, 95 (06)

[5] Characteristics of W- and Ti-doped VO2 thin films prepared by sol-gel method [J].

Chae, B. G. ;

Kim, H. T. ;

Yun, S. J. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (06) :D53-D55

[6] MEMRISTIVE DEVICES AND SYSTEMS [J].

CHUA, LO ;

KANG, SM .

PROCEEDINGS OF THE IEEE, 1976, 64 (02) :209-223

[7] MEMRISTOR - MISSING CIRCUIT ELEMENT [J].

CHUA, LO .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05) :507-+

[8] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[9]

DIVENTRA M, P IEEE IN PRESS

[10] Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide [J].

Driscoll, T. ;

Palit, S. ;

Qazilbash, M. M. ;

Brehm, M. ;

Keilmann, F. ;

Chae, Byung-Gyu ;

Yun, Sun-Jin ;

Kim, Hyun-Tak ;

Cho, S. Y. ;

Jokerst, N. Marie ;

Smith, D. R. ;

Basov, D. N. .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

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