Characteristics of W- and Ti-doped VO2 thin films prepared by sol-gel method

被引：52

作者：

Chae, B. G. ^{[1
]}

Kim, H. T. ^{[1
]}

Yun, S. J. ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 06期

关键词：

D O I：

10.1149/1.2903208

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

W- and Ti-doped VO(2) thin films were deposited onto sapphire by the sol-gel method. Both films were grown with (020)-preferred direction. Doping of W had a great effect on the transition behaviors. A 1.2 atom % W-doped VO(2) film showed a largely reduced resistance in the insulator state and decreased the transition temperature to 313 K. However, Ti-doped VO(2) film had a little change of the transition temperature, and it was 350 K, even for the 20 atom % Ti doping. The resistance in the metal state was very large, which means a markedly small change of the resistance at the transition temperature. Further study is required for understanding the effects of doping VO(2) film with metal ions.

引用

页码：D53 / D55

页数：3

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